A four-state memory cell based on magnetoelectric composite

Chinese Science Bulletin

Volumn 53, Issue 14, 2008, Pages 2135-2138

  Shi, Zhan ^a   Wang, Cuiping ^a   Liu, Xinjun ^a   Nan, Cewen ^b  

^a XIAMEN UNIVERSITY   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

Four state memory device; Magnetoelectric composite; Multiferroic; Read

Indexed keywords

EID: 48249133678     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1007/s11434-008-0275-8     Document Type: Article

References (12)

1. 5 film for phase change memory. Acta Phys Sin (in Chinese), 2006, 55(8): 4347-4352
2. Zhang R L, Hassoun M M, Black W C, et al. Demonstration of a four state sensing scheme for a single pseudo-spin valve GMR bit. IEEE Trans Magn, 1999, 35(5): 2829-2831
3. Nan C W. Magnetoelectric effect in composites of piezoelectric and piezomagnetic phases. Phys Rev B, 1994, 50(9): 6082-6088
4. 5. Phys Rev Lett, 2004, 93(10): 107207
5. Hur N, Park S, Sharma P A, et al. Electric polarization reversal and memory in a multiferroic material induced by magnetic fields. Nature, 2004, 429: 392-395
6. Gajek M, Bibes M, Fusil S, et al. Tunnel junctions with multiferroic barriers. Nat Mater, 2007, 6: 296-302
7. Scott J F. Multiferroic memories. Nat Mater, 2007, 6: 256-257
8. Dong S X, Zhai J Y, Li J F, et al. Small dc magnetic field response of magnetoelectric laminate composites. Appl Phys Lett, 2006, 88: 082907
9. Dong S X, Li J F, Vieland D, et al. A strong magnetoelectric voltage gain effect in magnetostrictive-piezoelectric composite. Appl Phys Lett, 2004, 85(16): 3534-3536
10. 3 laminated composites at the electromechanical resonance. Appl Phys Lett, 2006, 89: 243512
11. 2/epoxy composites. J Appl Phys, 2007, 101: 043902
12. 3 double-layer thin film prepared by pulsed-laser deposition. Appl Phys Lett, 2006, 88: 013111