Multiple-state storage capability of nitrogen-doped Ge2Sb2Te5 film for phase change memory

Wuli Xuebao/Acta Physica Sinica

Volumn 55, Issue 8, 2006, Pages 4347-4352

  Lai, Yun Feng ^a   Feng, Jie ^a   Qiao, Bao Wei ^a   Ling, Yun ^b   Lin, Yin Yin ^b   Tang, Ting Ao ^b   Cai, Bing Chu ^a   Chen, Bang Ming ^c  

^a Shanghai Jiao Tong University   (China)

^b FUDAN UNIVERSITY   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Ge2Sb2Te5; Multiple state storage; Nitrogen doping; Phase change memory

Indexed keywords

EID: 33748447922     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)