Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field

Journal of Applied Physics

Volumn 100, Issue 8, 2006, Pages

  Talalaev, V G ^a,b   Tomm, J W ^a   Sokolov, A S ^b   Shtrom, I V ^b   Novikov, B V ^b   Winzer, A T ^c   Goldhahn, R ^c   Gobsch, G ^c   Zakharov, N D ^d   Werner, P ^d   Gosele U ^d   Cirlin, G E ^e   Tonkikh, A A ^e   Ustinov, V M ^e   Tarasov, G G ^f  

^a MAX BORN INSTITUT   (Germany)

^b ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^c ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^d MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^e IOFFE INSTITUTE   (Russian Federation)

^f INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON RESONANCE; GROUND STATE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY; TUNING;

DECAY TIMES; LUMINESCENCE INTENSITIES; P-I-N JUNCTIONS; TRANSIENT PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33750527625     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357837     Document Type: Article

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