Integration of selective area anodized AgCl thin film with AlGaN/GaN HEMTs for chloride ion detection

Electrochemical and Solid-State Letters

Volumn 11, Issue 9, 2008, Pages

  Hung, S C ^a,b   Wang, Y L ^b   Hicks, B ^b   Pearton, S J ^b,d   Ren, F ^b,d   Johnson, J W ^c   Rajagopal, P ^c   Roberts, J C ^c   Piner, E L ^c   Linthicum, K J ^c   Chi, G C ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b University of Florida   (United States)

^c NITRONEX CORPORATION   (United States)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; CONCENTRATION (PROCESS); DRAIN CURRENT; ELECTROCHEMICAL CORROSION; ELECTRON MOBILITY; GALLIUM NITRIDE; IONS; OPTICAL DESIGN; SILVER; THICK FILMS;

AG/AGCL; ALGAN GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS (HEMT); ANODIZATION; ANODIZATION PROCESS; CHLORIDE ION CONCENTRATION; CHLORIDE IONS; ELECTROCHEMICAL (EC) MEASUREMENTS; ELECTROCHEMICAL SOCIETY (ECS); ENERGY DISPERSIVE X RAY ANALYSIS (EDAX); FILM PROPERTIES; GRAIN SIZES; LIMIT-OF-DETECTION (LOD); OPEN CIRCUIT POTENTIAL (OCP) MEASUREMENTS; OUTPUT SIGNALS; SELECTIVE AREA (SA); SENSING AREAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 48249102296     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2938726     Document Type: Article

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