Two-colour HgCdTe infrared detectors operating above 200 K

Opto-Electronics Review

Volumn 16, Issue 3, 2008, Pages 321-327

  Rutkowski, J ^a   Madejczyk, P ^a   Piotrowski, A ^b   Gawron, W ^a   Jozwikowski K ^a   Rogalski, A ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

^b VIGO SYSTEM S A   (Poland)

Author keywords

Dual waveband detectors; HgCdTe; Infrared detectors; MOCVD growth; Multi layer heterojunctions; Photodiodes; Two colour detectors

Indexed keywords

CADMIUM ALLOYS; CHEMICAL VAPOR DEPOSITION; EFFICIENCY; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; INFRARED DETECTORS; MERCURY AMALGAMS; PHOTODIODES; SEMICONDUCTOR ALLOYS; TEMPERATURE DISTRIBUTION;

CHEMICAL VAPOUR DEPOSITION; DIFFERENTIAL RESISTANCES; DUAL-WAVEBAND; HGCDTE; HIGH QUANTUM EFFICIENCY; MOCVD GROWTH; MULTILAYER HETEROJUNCTION; TEMPERATURE DEPENDENCE;

QUANTUM EFFICIENCY;

EID: 48249098918     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: 10.2478/s11772-008-0023-2     Document Type: Article

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