Effect of low temperature annealing prior to non-melt laser annealing in ultra-shallow junction formation

15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007

Volumn , Issue , 2007, Pages 317-320

  Fukaya, Takumi ^a   Yamada, Ryuta ^a   Tanaka, Yuki ^a   Matsumoto, Satoru ^a   Suzuki, Toshiharu ^b   Fuse, Gensyu ^b   Kudo, Toshio ^c   Sakuragi, Susumu ^c  

^a KEIO UNIVERSITY   (Japan)

^b SEN Corporation   (Japan)

^c SUMITOMO HEAVY INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; INTERNET PROTOCOLS; LASERS; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS;

CRYSTALLINITY; IMPLANTED LAYERS; LASER ANNEALING; LOW TEMPERATURES; ORDERS OF MAGNITUDES; REVERSE BIASES; SHALLOW JUNCTIONS;

ANNEALING;

EID: 47949112776     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2007.4383860     Document Type: Conference Paper

References (6)

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