45nm node p+ USJ formation with high dopant activation and low damage

Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Volumn , Issue , 2006, Pages 4-9

  Borland, John ^a   Shishiguchi, Seiichi ^b   Mineji, Akira ^b   Krull, Wade ^c   Jacobson, Dale ^c   Tanjyo, Masayasu ^d   Lerch, Wilfried ^e   Paul, Silke ^e   Gelpey, Jeff ^e   McCoy, Steve ^e   Venturini, Julien ^f   Current, Michael ^g   Faifer, Vladimir ^g   Hillard, Robert ^h   Benjamin, Mark ^h   Walker, Tom ⁱ   Buczkowski, Andrzej ⁱ   Zhiqiang, Li ⁱ   James, Chen ^j  

^a JOB Technologies   (United States)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c SemEquip   (United States)

^d NISSIN ION EQUIPMENT CO LTD   (Japan)

^e Mattson Technology   (United States)

^f SOPRA   (France)

^g Frontier Semiconductor   (United States)

^h Solid State Measurements   (United States)

ⁱ NANOMETRICS INC   (United States)

^j Four Dimensions   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); GATE DIELECTRICS; HIGH TEMPERATURE EFFECTS; SILICON WAFERS;

DOPANT ACTIVATION; NODE APPLICATIONS; SURFACE DOPANT; ULTRA SHALLOW JUNCTIONS (USJ);

SEMICONDUCTOR JUNCTIONS;

EID: 34250175125     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iwjt.2006.220849     Document Type: Conference Paper

References (5)

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2. R. Surdeanu, R. Lindsay, S. Severi, A. Satta, B. Pawlak, A. Lauwers, C. Dachs, K. Henson, S. McCoy, J. Gelpey and X. Pages, SSDM 2004, section B-3-1, p. 180.
3. J. Borland, M. Tanjo, N. Nagai, T. Aoyama and D. Jacobson, Semiconductor International, Jan. 2005, p. 52.
4. T. Aoyama, M. Fukuda, Y. Nara, S. Umisedo, N. Hamamoto, M. Tanjo and T. Nagayama, IWJT 2005, June 2005, section S2-2, p. 27.
5. J. Borland, T. Matsuda and K. Sakamoto, Solid State Technology, June 2002, p. 83.