A high-gain, low-noise, +6dBm PA in 90nm CMOS for 60-GHz radio

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2007, Pages 104-107

  Khanpour, M ^a   Voinigescu, S P ^a   Yang, M T ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

60 GHz radio; CMOS; Millimeter wave amplifiers; Power amplifiers

Indexed keywords

ARSENIC COMPOUNDS; ELECTRIC CONDUCTIVITY; INTEGRATED CIRCUITS; METALS; OPTICAL DESIGN; POWER AMPLIFIERS; SEMICONDUCTOR MATERIALS;

CASCODE; COMPOUND SEMICONDUCTOR (CS); INDUCTIVE DEGENERATION; LARGE SIGNAL PERFORMANCE; LOW NOISE; OUTPUT STAGES; POWER SUPPLY VOLTAGES; POWER-ADDED EFFICIENCY (PAE); SATURATED OUTPUT POWER; SIMULATED NOISE; SMALL SIGNALS;

AMPLIFIERS (ELECTRONIC);

EID: 47349123267     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS07.2007.29     Document Type: Conference Paper

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