SiGe T/R modules for Ka-band phased arrays (Invited)

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2007, Pages 124-127

  Min, Byung Wook ^a   Chang, Michael ^a   Rebeiz, Gabriel M ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

CMOS phase shifter; CMOS switch; Ka band integrated circuits; Phased array; SiGe LNA; SiGe power amplifier (PA); T R module

Indexed keywords

AMPLIFIERS (ELECTRONIC); ARSENIC COMPOUNDS; AUDIO FREQUENCY AMPLIFIERS; BICMOS TECHNOLOGY; ELECTRIC CONDUCTIVITY; ELECTRIC SWITCHES; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; PHASE SHIFT; PHASE SHIFTERS; POWER AMPLIFIERS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON ALLOYS;

CMOS SWITCHES; COMPOUND SEMICONDUCTOR (CS); INDIVIDUAL COMPONENTS; K A-BAND; LOW NOISE AMPLIFIER (LNA); PHASED ARRAYS; RMS PHASE; SATURATED OUTPUT POWER; SIGE BICMOS; SIGE HBTS; SMALL SIGNAL GAIN (SSG); SPDT SWITCHES; TRANSMIT/RECEIVE (T/R) MODULES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 47349106656     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS07.2007.34     Document Type: Conference Paper

References (4)

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4. R. Garver, "Broad-band diode phase shifter," IEEE Transactions on Microwave Theory and Techniques, vol. MTT-20, pp. 314-323, May 1975.