Phase transition characteristics of Ge-Sb-Te pseudobinary alloys in laser irradiation measurement

Current Applied Physics

Volumn 8, Issue 6, 2008, Pages 716-719

  Park, Tae Jin ^a   Park, Sung Jin ^b   Kim, Dae Hyun ^b   Kim, In Soo ^b   Kim, Soo Kyung ^c   Choi, Se Young ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b Yonsei University   (South Korea)

^c NANOStorage Co Ltd   (South Korea)

Author keywords

Chalcogenide; Optical property; Phase change memory; Phase transition

Indexed keywords

GERMANIUM; METALLIC COMPOUNDS;

GE-SB-TE; LASER IRRADIATIONS; OPTICAL SWITCHING; PSEUDO BINARIES; STRUCTURAL TRANSFORMATIONS; TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31);

PULSED LASER DEPOSITION;

EID: 47349103002     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2007.04.039     Document Type: Article

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