Surviving process variation: Investigation of CNR MOSFETs with tapered channels using fully self-consistent NEGF and tight-binding methods

IEEE Electron Device Letters

Volumn 29, Issue 7, 2008, Pages 759-761

  Guan, Ximeng ^a,b   Zhang, Ming ^a   Yu, Zhiping ^a  

^a TSINGHUA UNIVERSITY   (China)

^b Stanford University   (United States)

Author keywords

Carbon nanoribbon (CNR); Process variation; Quantum transport; Tapered channel; Tight binding; Width dependency

Indexed keywords

CARRIER TRANSPORT; COMPUTER SIMULATION; DIFFERENTIAL EQUATIONS; GREEN'S FUNCTION; SIMULATORS;

CARBON NANORIBBON (CNR); CARRIER (CO); CHANNEL GEOMETRIES; CHANNEL LENGTHS; CURRENT VOLTAGE (I V) CHARACTERISTICS; DESIGN AND OPTIMIZATION; DESIGN APPROACHES; DEVICE PERFORMANCES; DEVICE SIMULATORS; DOUBLE GATE (DG); MOSFETS; NANO-SCALE DEVICES; NON EQUILIBRIUM GREEN'S FUNCTION (NEGF); NUMERICAL SIMULATIONS; PROCESS VARIATIONS; TAPERED CHANNELS; TIGHT BINDING (TB) METHOD; TIGHT-BINDING HAMILTONIAN;

MOSFET DEVICES;

EID: 47249154867     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000917     Document Type: Article

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