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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 8, 2002, Pages 853191-853199

Spin injection into ballistic layers and resistance modulation in spin field-effect transistors

(2) Raichev, O E a,c Debray, P b

a SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ (France)

b UNIVERSITY OF CINCINNATI (United States)

c INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIAL; LEAD;

ACCELERATION; ARTICLE; BALLISTICS; CALCULATION; DEVICE; DIFFUSION; ELECTRON TRANSPORT; MAGNETISM; POLARIZATION; SEMICONDUCTOR;

EID: 0037084862 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.65.085319 Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.