Piezoresistivity effects in MOS-FET useful for pressure transducers

Journal of Physics D: Applied Physics

Volumn 12, Issue 11, 1979, Pages 1973-1983

  Canali, C ^a   Ferla, F ^a   Morten, B ^a   Taroni, A ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

PIEZOELECTRICITY; STRAIN GAGES; TRANSISTORS;

PIEZORESISTIVITY;

SEMICONDUCTOR DEVICES, MIS;

EID: 0018542001     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/12/11/025     Document Type: Article

References (11)

1. Band Structure Investigation on p-Type Silicon Inversion Layers by Piezoresistance and Mobility Measurements
2. Strain Sensitivity of MOSFET Devices