-
2
-
-
21544456780
-
-
Littau, K. A.; Szajowshki, P. J.; Muller, A. J.; Kortan, A. R.; Brus, L. E.; J. Phys. Chem. 1993, 97, 1224-1230.
-
(1993)
J. Phys. Chem
, vol.97
, pp. 1224-1230
-
-
Littau, K.A.1
Szajowshki, P.J.2
Muller, A.J.3
Kortan, A.R.4
Brus, L.E.5
-
3
-
-
0141991905
-
-
Li, X.; He, Y.; Talukdar, S. S.; Swihart, M. T. Langmuir 2003, 19, 8490-8496.
-
(2003)
Langmuir
, vol.19
, pp. 8490-8496
-
-
Li, X.1
He, Y.2
Talukdar, S.S.3
Swihart, M.T.4
-
5
-
-
0001933641
-
-
Heinrich, J. L.; Curtis, C. L.; Credo, G. M.; Kavanagh, K. L.; Sailor, M. J. Science (Washington, DC, U.S.) 1992, 255, 66-68.
-
Heinrich, J. L.; Curtis, C. L.; Credo, G. M.; Kavanagh, K. L.; Sailor, M. J. Science (Washington, DC, U.S.) 1992, 255, 66-68.
-
-
-
-
6
-
-
0010454336
-
-
Swerida-Krawiec, B; Cassagneau, T; Fendler, J. H. J. Phys. Chem. B 1999, 103, 9524-9529.
-
(1999)
J. Phys. Chem. B
, vol.103
, pp. 9524-9529
-
-
Swerida-Krawiec, B.1
Cassagneau, T.2
Fendler, J.H.3
-
7
-
-
0001698371
-
-
Bley, R. A.; Kauzlarich, S. M.; Davis, J. E. Lee, H. W. H. Chem. Mater. 1996, 8, 1881-1888.
-
(1996)
Chem. Mater
, vol.8
, pp. 1881-1888
-
-
Bley, R.A.1
Kauzlarich, S.M.2
Davis, J.E.3
Lee, H.W.H.4
-
8
-
-
0000650981
-
-
Nayfeh, M.; Barry, N.; Therrien, J.; Akcakir, O.; Gratton, E.; Belomoin, G. Appl. Phys. Lett. 2001, 78, 1131-1133.
-
(2001)
Appl. Phys. Lett
, vol.78
, pp. 1131-1133
-
-
Nayfeh, M.1
Barry, N.2
Therrien, J.3
Akcakir, O.4
Gratton, E.5
Belomoin, G.6
-
9
-
-
0000495288
-
-
Belomoin, G.; Therrien, J.; Nayfeh, M. Appl. Phys. Lett. 2000, 77, 779-781.
-
(2000)
Appl. Phys. Lett
, vol.77
, pp. 779-781
-
-
Belomoin, G.1
Therrien, J.2
Nayfeh, M.3
-
10
-
-
0037073458
-
-
Lie, L. H.; Duerdin, M.; Tuite, E. M.; Houlton, A.; Horrocks, B. R. J. Electroanal. Chem. 2002, 538-539, 183-190.
-
(2002)
J. Electroanal. Chem
, vol.538-539
, pp. 183-190
-
-
Lie, L.H.1
Duerdin, M.2
Tuite, E.M.3
Houlton, A.4
Horrocks, B.R.5
-
11
-
-
0037138692
-
-
Baldwin, R. K.; Pettigrew, K. A.; Garno, J. C.; Power, P. P.; Liu, G. Y.; Kauzlarich, S. M. J. Am. Chem. Soc. 2002, 124, 1150-1151.
-
(2002)
J. Am. Chem. Soc
, vol.124
, pp. 1150-1151
-
-
Baldwin, R.K.1
Pettigrew, K.A.2
Garno, J.C.3
Power, P.P.4
Liu, G.Y.5
Kauzlarich, S.M.6
-
12
-
-
0142183631
-
-
Pettigrew, K.; Liu, Q.; Power, P. P.; Kauzlarich, S. M. Chem. Mater. 2003, 15, 4005-4011.
-
(2003)
Chem. Mater
, vol.15
, pp. 4005-4011
-
-
Pettigrew, K.1
Liu, Q.2
Power, P.P.3
Kauzlarich, S.M.4
-
13
-
-
33947512726
-
-
Zhang, X.; Neiner, D.; Wang, S.; Louie, A. Y.; Kauzlarich, S. M. Nanotechnology 2007, 18, 95601.
-
(2007)
Nanotechnology
, vol.18
, pp. 95601
-
-
Zhang, X.1
Neiner, D.2
Wang, S.3
Louie, A.Y.4
Kauzlarich, S.M.5
-
14
-
-
0000943087
-
-
Wilcoxon, J.; Samara, G.; Provencio, P. Phys. Rev. B: Condens. Matter Mater. Phys. 1999, 60, 2704-2714.
-
(1999)
Phys. Rev. B: Condens. Matter Mater. Phys
, vol.60
, pp. 2704-2714
-
-
Wilcoxon, J.1
Samara, G.2
Provencio, P.3
-
15
-
-
0000339599
-
-
Heath, J. R. Science (Washington, DC, U.S.) 1992, 258, 1131-1133.
-
Heath, J. R. Science (Washington, DC, U.S.) 1992, 258, 1131-1133.
-
-
-
-
16
-
-
0034836887
-
-
Holmes, J. D.; Ziegler, K. J.; Doty, R. C.; Pell, L. E.; Johnston, K. P.; Korgel, B. J. Am. Chem. Soc. 2001, 123, 3743-3748.
-
(2001)
J. Am. Chem. Soc
, vol.123
, pp. 3743-3748
-
-
Holmes, J.D.1
Ziegler, K.J.2
Doty, R.C.3
Pell, L.E.4
Johnston, K.P.5
Korgel, B.6
-
17
-
-
0003281266
-
-
English, D. E.; Pell, L. E.; Yu, Z.; Barbara, P. F.; Korgel, B. A. Nano Lett. 2002, 2, 681-685.
-
(2002)
Nano Lett
, vol.2
, pp. 681-685
-
-
English, D.E.1
Pell, L.E.2
Yu, Z.3
Barbara, P.F.4
Korgel, B.A.5
-
18
-
-
0037044532
-
-
Puzder, A.; Williamson, A.; Grossman, J.; Galli, G. J. Chem. Phys. 2002, 117, 6721.
-
(2002)
J. Chem. Phys
, vol.117
, pp. 6721
-
-
Puzder, A.1
Williamson, A.2
Grossman, J.3
Galli, G.4
-
19
-
-
0141627855
-
-
Zhou, Z.; Brus, L.; Friesner, R. A. Nano Lett. 2003, 3, 163-167.
-
(2003)
Nano Lett
, vol.3
, pp. 163-167
-
-
Zhou, Z.1
Brus, L.2
Friesner, R.A.3
-
20
-
-
4243943295
-
-
Perdew, J. P.; Burke, K.; Ernzerhof, M. Phys. Rev. Lett. 1996, 77, 3865-3868.
-
(1996)
Phys. Rev. Lett
, vol.77
, pp. 3865-3868
-
-
Perdew, J.P.1
Burke, K.2
Ernzerhof, M.3
-
21
-
-
47249161032
-
-
Gygi, F. Lawrence Livermore National Laboratory: Livermore, CA
-
Gygi, F. Lawrence Livermore National Laboratory: Livermore, CA.
-
-
-
-
24
-
-
47249119549
-
-
Voronkov, M. G.; Dolgov, B. N.; Karpenko, G. B. Sov. J. Gen. Chem. 1954, 24, 273-275.
-
(1954)
Sov. J. Gen. Chem
, vol.24
, pp. 273-275
-
-
Voronkov, M.G.1
Dolgov, B.N.2
Karpenko, G.B.3
-
25
-
-
4043086984
-
-
Pell, L.; Schricker, A.; Miculec, F.; Korgel, B. Langmuir 2004, 20, 6546-6548.
-
(2004)
Langmuir
, vol.20
, pp. 6546-6548
-
-
Pell, L.1
Schricker, A.2
Miculec, F.3
Korgel, B.4
-
27
-
-
0034712059
-
-
Holmes, J. D; Johnston, K. P.; Doty, R. C.; Korgel B. A. Science (Washington, DC, U.S.) 2000, 287, 1471-1473.
-
Holmes, J. D; Johnston, K. P.; Doty, R. C.; Korgel B. A. Science (Washington, DC, U.S.) 2000, 287, 1471-1473.
-
-
-
-
28
-
-
36549100673
-
-
Hultman, L.; Robertsson, A.; Hentzell, H. T. G.; Engstrom, I.; Psaras, P. A. J. Appl. Phys. 1987, 62, 3647-3655.
-
(1987)
J. Appl. Phys
, vol.62
, pp. 3647-3655
-
-
Hultman, L.1
Robertsson, A.2
Hentzell, H.T.G.3
Engstrom, I.4
Psaras, P.A.5
-
31
-
-
36549100673
-
-
Hultman, L.; Robertsson, A.; Hentzell, H. T. G.; Engström, I.; Psaras, P. A. J. Appl. Phys. 1987, 62, 3647-3655.
-
(1987)
J. Appl. Phys
, vol.62
, pp. 3647-3655
-
-
Hultman, L.1
Robertsson, A.2
Hentzell, H.T.G.3
Engström, I.4
Psaras, P.A.5
-
32
-
-
0000820648
-
In Crucial Issues in Semiconductor Materials and Processing Technologies; NATO AS1 Series E: Applied Sciences
-
Priolo, F, Rimini, E, Poate, J. M, Eds, Kluwer: Dordrecht, The Netherlands
-
Spaepen, F.; Nygren, E.; Wagner, A. V. In Crucial Issues in Semiconductor Materials and Processing Technologies; NATO AS1 Series E: Applied Sciences, Vol. 222; Coffa, S., Priolo, F., Rimini, E., Poate, J. M., Eds.; Kluwer: Dordrecht, The Netherlands, 1992; p 483.
-
(1992)
Coffa, S
, vol.222
, pp. 483
-
-
Spaepen, F.1
Nygren, E.2
Wagner, A.V.3
-
35
-
-
0032099569
-
-
Wakayama, Y.; Fujinuma, H.; Tanaka, S. J. Mater. Res. 1998, 13, 1492-1496.
-
(1998)
J. Mater. Res
, vol.13
, pp. 1492-1496
-
-
Wakayama, Y.1
Fujinuma, H.2
Tanaka, S.3
-
36
-
-
33646519501
-
-
Dal Negro, L.; Yi, J. H.; Kimerling, L. C.; Hamel, S.; Williamson, A.; Galli, G. Appl. Phys. Lett. 2006, 88, 183103.
-
(2006)
Appl. Phys. Lett
, vol.88
, pp. 183103
-
-
Dal Negro, L.1
Yi, J.H.2
Kimerling, L.C.3
Hamel, S.4
Williamson, A.5
Galli, G.6
-
37
-
-
0001399331
-
-
Allan, G.; Delerue, C.; Lannoo, M. Phys. Rev. Lett. 1997, 78, 3161-3164.
-
(1997)
Phys. Rev. Lett
, vol.78
, pp. 3161-3164
-
-
Allan, G.1
Delerue, C.2
Lannoo, M.3
-
38
-
-
0001069396
-
-
Rinnert, H.; Vergnat, M.; Burneau, A. J. Appl. Phys. 2001, 89, 237-243.
-
(2001)
J. Appl. Phys
, vol.89
, pp. 237-243
-
-
Rinnert, H.1
Vergnat, M.2
Burneau, A.3
-
39
-
-
0038646300
-
-
Franzo, G.; Boninelli, S.; Pacifici, D.; Priolo, F.; Iacona, F.; Bongiorno, C. Appl. Phys. Lett. 2003, 82, 3871-3873.
-
(2003)
Appl. Phys. Lett
, vol.82
, pp. 3871-3873
-
-
Franzo, G.1
Boninelli, S.2
Pacifici, D.3
Priolo, F.4
Iacona, F.5
Bongiorno, C.6
-
40
-
-
0037101112
-
-
Yang, B; Xiong, Q; Lei, J. R.; Liu, Y. G.; Wang, D. Z.; Huang, N. K. J. Mater. Sci. Lett. 2002, 21, 1073-1075.
-
(2002)
J. Mater. Sci. Lett
, vol.21
, pp. 1073-1075
-
-
Yang, B.1
Xiong, Q.2
Lei, J.R.3
Liu, Y.G.4
Wang, D.Z.5
Huang, N.K.6
-
42
-
-
47249098245
-
-
Cheng, S.; Ren, Z. X.; Liang, R.; Lu, Q.; Liu, W.; Ning, Z. Plasma Sci. Technol. 2000, 2, 213-218.
-
(2000)
Plasma Sci. Technol
, vol.2
, pp. 213-218
-
-
Cheng, S.1
Ren, Z.X.2
Liang, R.3
Lu, Q.4
Liu, W.5
Ning, Z.6
-
43
-
-
0037018538
-
-
Chen, M.; Zheng, A.; Hao, L.; Zhou, M. J. Phys. Chem. A 2002, 106, 3077-3083.
-
(2002)
J. Phys. Chem. A
, vol.106
, pp. 3077-3083
-
-
Chen, M.1
Zheng, A.2
Hao, L.3
Zhou, M.4
-
46
-
-
0037438608
-
-
Goss, J. P.; Hahn, I.; Jones, R.; Briddon, P. R.; Öberg, S. Phys. Rev. B: Condens. Matter Mater. Phys. 2003, 67, 45206.
-
(2003)
Phys. Rev. B: Condens. Matter Mater. Phys
, vol.67
, pp. 45206
-
-
Goss, J.P.1
Hahn, I.2
Jones, R.3
Briddon, P.R.4
Öberg, S.5
-
47
-
-
4244025090
-
-
Jones, R.; Öberg, S.; Rasmussen, R. B.; Nielsen, B. B. Phys. Rev. Lett. 1994, 72, 1882-1885.
-
(1994)
Phys. Rev. Lett
, vol.72
, pp. 1882-1885
-
-
Jones, R.1
Öberg, S.2
Rasmussen, R.B.3
Nielsen, B.B.4
-
48
-
-
47249107215
-
-
This is consistent with known molecules containing N, Si, and H atoms such as disilazane, trisilylamine, and studies of the dissociative adsorption of ammonia on silicon surfaces.49,50
-
49,50
-
-
-
-
50
-
-
2342484288
-
-
Bengio, S.; Ascolani, H.; Franco, N.; Avila, J.; Asensio, M. C.; Bradshaw, A. M.; Woodruff, D. P. Phys. Rev. B: Condens. Matter Mater. Phys. 2004, 69, 125340.
-
(2004)
Phys. Rev. B: Condens. Matter Mater. Phys
, vol.69
, pp. 125340
-
-
Bengio, S.1
Ascolani, H.2
Franco, N.3
Avila, J.4
Asensio, M.C.5
Bradshaw, A.M.6
Woodruff, D.P.7
-
51
-
-
47249155569
-
-
Consider the following exothermic reactions: Si, C (graphite) → SiC, 3SiC, 2N2 → Si3N4, C (graphite, and Si3N4, 3O2 → 3SiO2, 2N2. Taken together, these imply that as compared to the various elements in their standard states, silicon oxide is more stable than silicon nitride, which is more stable than silicon carbide, which is more stable than crystalline silicon. Consider also the enthalpies of formation of H 3SiNH2, H3SiCH3, and other small molecules (found in the HiTempThermo online database of results of high-level ab initio-based computed properties: public.ca.sandia.gov/HiTempThermo/, At 300 K, the ΔH values (in kcal/mol) are as follows: CH4, 17.9, H3SiCH3, 7.3, H2 (0.0, H2O, 57.8, NH3, 11.0, H3SiOH, 65.8, SiH4 8.2, and SiH
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3, (-69.2 → -76.8), and in molecular species as well as in crystalline species, silicon-oxygen bonds are stronger (more stable) than silicon-nitrogen bonds, which are stronger than silicon-carbon bonds, which are the same as or slightly stronger than silicon-hydrogen bonds. Under the conditions at which the clusters were made, N replaced some or all of the carbons. At room temperature and pressure, the barrier to replace Si-N bonds by the more stable Si-O bonds is too large (-0.4 kcal/mol or 201 K), and so oxidation is effectively prevented.
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