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Volumn 112, Issue 10, 2008, Pages 3585-3590

Effect of nitrogen on the stability of silicon nanocrystals produced by decomposition of alkyl silanes

Author keywords

[No Author keywords available]

Indexed keywords

AMERICAN CHEMICAL SOCIETY (ACS); COMPUTATIONAL MODELLING; ELECTRON MICROSCOPY ANALYSIS; ENHANCED STABILITY; FIRST-PRINCIPLES DENSITY FUNCTIONAL THEORY; GOLD CRYSTAL; LATTICE (CO); SI-NANOCRYSTALS; SILICON NANOCRYSTALS (SI-NC); SOLID-PHASE; TETRAETHYLSILANE; TETRAMETHYL SILANE (TMS); TRIOCTYLAMINE (TOA);

EID: 47249092807     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp0776255     Document Type: Article
Times cited : (8)

References (51)
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    • Heinrich, J. L.; Curtis, C. L.; Credo, G. M.; Kavanagh, K. L.; Sailor, M. J. Science (Washington, DC, U.S.) 1992, 255, 66-68.
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    • Heath, J. R. Science (Washington, DC, U.S.) 1992, 258, 1131-1133.
    • Heath, J. R. Science (Washington, DC, U.S.) 1992, 258, 1131-1133.
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    • Gygi, F. Lawrence Livermore National Laboratory: Livermore, CA
    • Gygi, F. Lawrence Livermore National Laboratory: Livermore, CA.
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    • Holmes, J. D; Johnston, K. P.; Doty, R. C.; Korgel B. A. Science (Washington, DC, U.S.) 2000, 287, 1471-1473.
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    • 0000820648 scopus 로고
    • In Crucial Issues in Semiconductor Materials and Processing Technologies; NATO AS1 Series E: Applied Sciences
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    • Spaepen, F.; Nygren, E.; Wagner, A. V. In Crucial Issues in Semiconductor Materials and Processing Technologies; NATO AS1 Series E: Applied Sciences, Vol. 222; Coffa, S., Priolo, F., Rimini, E., Poate, J. M., Eds.; Kluwer: Dordrecht, The Netherlands, 1992; p 483.
    • (1992) Coffa, S , vol.222 , pp. 483
    • Spaepen, F.1    Nygren, E.2    Wagner, A.V.3
  • 48
    • 47249107215 scopus 로고    scopus 로고
    • This is consistent with known molecules containing N, Si, and H atoms such as disilazane, trisilylamine, and studies of the dissociative adsorption of ammonia on silicon surfaces.49,50
    • 49,50
  • 51
    • 47249155569 scopus 로고    scopus 로고
    • Consider the following exothermic reactions: Si, C (graphite) → SiC, 3SiC, 2N2 → Si3N4, C (graphite, and Si3N4, 3O2 → 3SiO2, 2N2. Taken together, these imply that as compared to the various elements in their standard states, silicon oxide is more stable than silicon nitride, which is more stable than silicon carbide, which is more stable than crystalline silicon. Consider also the enthalpies of formation of H 3SiNH2, H3SiCH3, and other small molecules (found in the HiTempThermo online database of results of high-level ab initio-based computed properties: public.ca.sandia.gov/HiTempThermo/, At 300 K, the ΔH values (in kcal/mol) are as follows: CH4, 17.9, H3SiCH3, 7.3, H2 (0.0, H2O, 57.8, NH3, 11.0, H3SiOH, 65.8, SiH4 8.2, and SiH
    • 3, (-69.2 → -76.8), and in molecular species as well as in crystalline species, silicon-oxygen bonds are stronger (more stable) than silicon-nitrogen bonds, which are stronger than silicon-carbon bonds, which are the same as or slightly stronger than silicon-hydrogen bonds. Under the conditions at which the clusters were made, N replaced some or all of the carbons. At room temperature and pressure, the barrier to replace Si-N bonds by the more stable Si-O bonds is too large (-0.4 kcal/mol or 201 K), and so oxidation is effectively prevented.


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