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Metals and Materials International

Volumn 14, Issue 3, 2008, Pages 353-356

Growth and optical properties of gallium nitride nanowires produced via different routes

(6) Seong, Han Kyu a Jeong, Hannah a Ha, Ryong a Lee, Jung Chul b Sung, Yun Mo b Choi, Heon Jin a

a Yonsei University (South Korea)

b Korea University (South Korea)

Author keywords

GaN; Nanowires; Semiconducting III V materials; Synthetic route

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NANOCRYSTALLINE MATERIALS; RED SHIFT; VAPOR PHASE EPITAXY; WIDE BAND GAP SEMICONDUCTORS;

CHEMICAL VAPOR DEPOSITIONS (CVD); FULL WIDTH HALF MAXIMUM; GALLIUM NITRIDE NANOWIRES; PHOTOLUMINESCENCE PROPERTIES; SELECTIVE AREA GROWTH; SEMI CONDUCTING III-V MATERIALS; SYNTHETIC ROUTES; TRANSMISSION ELECTRON;

NANOWIRES;

EID: 47049126518 PISSN: 15989623 EISSN: None Source Type: Journal
DOI: 10.3365/met.mat.2008.06.353 Document Type: Article

Times cited : (5)

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