Effect of annealing on the visible photoluminescence characteristics of octadecyltrichlorosilane monolayers on silica surfaces

Journal of Physical Chemistry C

Volumn 112, Issue 12, 2008, Pages 4581-4589

  Sagawa, Natsuko ^a   Uchino, Takashi ^a  

^a KOBE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DECOMPOSITION; DENSITY FUNCTIONAL THEORY; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; LIGHT EMISSION; LUMINESCENCE; MISSILE BASES; PHOTOLUMINESCENCE; PHOTORESISTS; PROBABILITY DENSITY FUNCTION; PYROLYSIS; SELF ASSEMBLED MONOLAYERS; SILICA; SILICATE MINERALS; SILICON COMPOUNDS;

ALKYL CHAINS; AMERICAN CHEMICAL SOCIETY (ACS); ANNEALING CONDITIONS; ANNEALING ENVIRONMENT; ANNEALING TEMPERATURE (TA); ANNEALING TIME; DECAY DYNAMICS; DENSITY FUNCTIONAL THEORY (DFT) CALCULATIONS; EMISSION CENTERS; ENERGY LEVELS; NON-RADIATIVE DECAYS; OCTADECYLTRICHLOROSILANE (ODS); OCTADECYLTRICHLOROSILANE (OTS) MONOLAYERS; PEAK WAVELENGTHS; PHOTOLUMINESCENCE (PL); PHOTOLUMINESCENCE CHARACTERISTICS; PL EXCITATION (PLE); RECOMBINATION PROCESSES; RED-SHIFTS; SELF ASSEMBLED MONOLAYERS (SAMS); SILICA SURFACES; TEMPERATURE DEPENDENCES;

ANNEALING;

EID: 47049110803     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp076945l     Document Type: Article

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