Structural inhomogeneity of Ge-doped amorphous SiO2 probed by photoluminescence lifetime measurements under synchrotron radiation

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 3, 2007, Pages 934-937

  Agnello, S ^a   Buscarino, G ^a   Cannas, M ^a   Messina, F ^a   Grandi, S ^b   Magistris, A ^b  

^a UNIVERSITY OF PALERMO   (Italy)

^b UNIVERSITY OF PAVIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL ABSORPTION BANDS; PHOTOLUMINESCENCE (PL); PL BANDS; STRUCTURAL INHOMOGENEITY; TIME DECAY;

ABSORPTION; BUILDING MATERIALS; GERMANIUM; INSULATING MATERIALS; LUMINESCENCE; SILICON COMPOUNDS;

LIGHT EMISSION;

EID: 46749156534     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200673779     Document Type: Conference Paper

References (12)

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