A wideband millimeter-wave power amplifier with 20 dB linear power gain and +8 dBm maximum saturated output power

IEEE Journal of Solid-State Circuits

Volumn 43, Issue 7, 2008, Pages 1553-1562

  Jin, Yanyu ^a,b   Sanduleanu, Mihai A T ^a,c,d   Long, John R ^a,b  

^a IEEE

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d IMEC   (Belgium)

Author keywords

60 GHz circuits; CMOS power amplifier; Millimeter wave (mm wave) power amplifier; Power amplifier (PA); Wideband

Indexed keywords

BROADBAND AMPLIFIERS; EIGENVALUES AND EIGENFUNCTIONS; ENERGY STORAGE; OPTICAL DESIGN; POWER AMPLIFIERS; WAVE POWER; WAVES;

1 DB COMPRESSION POINT; BULK CMOS; CASCODE; MATCHING NETWORKS; MILLIMETER-WAVE (MM-WAVE); ON CHIPS; POWER GAINS; SATURATED OUTPUT POWER; WIDE BANDS; WIDE GAP;

MILLIMETER WAVES;

EID: 46749148801     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2008.922385     Document Type: Conference Paper

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