Influence of hydrostatic pressure on the native point defects in wurtzite ZnO: Ab initio calculation

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 372, Issue 30, 2008, Pages 5077-5082

  Gai, Y Q ^a,b   Yao, B ^a   Li, Y F ^a,b   Lu, Y M ^a   Shen, D Z ^a   Zhang, J Y ^a   Zhao, D X ^a   Fan, X W ^a   Cui, T ^c  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c JILIN UNIVERSITY   (China)

Author keywords

Ab initio; Defect; Hydrostatic pressure; p type; Pressure coefficient; ZnO

Indexed keywords

CALCULATIONS; DEFECTS; HYDRAULICS; HYDROSTATIC PRESSURE; II-VI SEMICONDUCTORS; OXYGEN; POINT DEFECTS; ZINC; ZINC OXIDE; ZINC SULFIDE;

AB INITIO; AB INITIO CALCULATIONS; DIFFERENT PRESSURES; EXTERNAL PRESSURES; NATIVE POINT DEFECTS; P-TYPE; PRESSURE COEFFICIENTS; TRANSITION ENERGY LEVELS;

OXYGEN VACANCIES;

EID: 46449125524     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2008.05.055     Document Type: Article

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