Thickness effect of Pb2Ru2O7-x conductive interfacial layers on ferroelectric properties of Pt/Pb(Zr0.35Ti 0.65)O3/Pt capacitors

Thin Solid Films

Volumn 468, Issue 1-2, 2004, Pages 100-104

  Seong, Nak Jin ^a   Choi, Kyu Jeong ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

Ferroelectric properties; Pb2Ru2O7 x (PRO) interfacial layer; PZT; Reactive rf co sputtering

Indexed keywords

ANNEALING; APPROXIMATION THEORY; CAPACITORS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; FERROELECTRIC MATERIALS; MICROELECTRONICS; MICROSTRUCTURE; PLATINUM; RANDOM ACCESS STORAGE; SURFACE ROUGHNESS;

FERROELECTRIC LEAD ZIRCONATE TITANATE (PZT); FERROELECTRIC PROPERTIES; FERROELECTRIC RANDOM ACCESS MEMORY (FERAM); REACTIVE RF CO-SPUTTERING;

LEAD COMPOUNDS;

EID: 4644343768     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.04.024     Document Type: Article

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