Mapping of the luminescence decay of lightly-doped n-4H-SiC at room-temperature

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 605-608

  Schneider, K ^a   Helbig, R ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Carrier lifetime; Time resolved photoluminescence

Indexed keywords

CARRIER LIFETIME; DOPING (ADDITIVES); EPILAYERS; PHOTOLUMINESCENCE; DECAY (ORGANIC); MAPPING; SILICON WAFERS;

ATYPICAL SIGNALS; DECAY CURVE; DECAY TIME CONSTANTS; TIME RESOLVED PHOTOLUMINESCENCE; DECAY TIME CONSTANT; LIGHTLY DOPED; LUMINESCENCE DECAYS; ORDERS OF MAGNITUDE; SIC EPILAYERS; SINGLE SAMPLE; SINGLE WAFER; TIME-RESOLVED PHOTOLUMINESCENCE;

SILICON CARBIDE;

EID: 0042875233     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.605     Document Type: Article

References (5)

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5. Results to be published