Electron-doped infinite-layer thin films with TCzero = 41 K grown on DyScO3 substrates

Physica C: Superconductivity and its Applications

Volumn 412-414, Issue SPEC. ISS., 2004, Pages 1349-1353

  Karimoto, S ^a   Naito, M ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

DyScO3; Infinite layer compound; MBE; Sr1 xLaxCuO2

Indexed keywords

DYSPROSIUM COMPOUNDS; ELECTRON TRANSITIONS; ETCHING; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; STRAIN; STRONTIUM COMPOUNDS; TENSILE PROPERTIES; THERMAL EFFECTS;

DYSCO3; ELECTRON DOPING; INFINITE-LAYER COMPOUNDS; SR1-XLAXCUO2;

SUPERCONDUCTING FILMS;

EID: 4644247059     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physc.2004.01.160     Document Type: Conference Paper

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