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Volumn 468, Issue 1-2, 2004, Pages 234-239

Highly stable hydrogenated gallium-doped zinc oxide thin films grown by DC magnetron sputtering using H2/Ar gas

Author keywords

Hydrogen; SIMS; Sputtering; Zinc oxide

Indexed keywords

CARRIER CONCENTRATION; FILM GROWTH; GALLIUM; GRAIN SIZE AND SHAPE; HYDROGEN; HYDROGENATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; ZINC OXIDE;

EID: 4644231657     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.137     Document Type: Article
Times cited : (20)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.