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Volumn 468, Issue 1-2, 2004, Pages 234-239
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Highly stable hydrogenated gallium-doped zinc oxide thin films grown by DC magnetron sputtering using H2/Ar gas
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Author keywords
Hydrogen; SIMS; Sputtering; Zinc oxide
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Indexed keywords
CARRIER CONCENTRATION;
FILM GROWTH;
GALLIUM;
GRAIN SIZE AND SHAPE;
HYDROGEN;
HYDROGENATION;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTOR DOPING;
ZINC OXIDE;
FILM SURFACE;
HALL MOBILITY;
THIN FILMS;
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EID: 4644231657
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2004.05.137 Document Type: Article |
Times cited : (20)
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References (15)
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