Infrared photoluminescence from TlGaS2 layered single crystals

Crystal Research and Technology

Volumn 39, Issue 9, 2004, Pages 800-806

  Yuksek, N S ^a   Gasanly, N M ^a   Aydinli, A ^b   Ozkan, H ^a   Acikgoz, M ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^b BILKENT UNIVERSITY   (Turkey)

Author keywords

Defect levels; Layered crystals; Photoluminescence; Semiconductors; TlGaS 2

Indexed keywords

ACTIVATION ENERGY; ELECTRON ENERGY LEVELS; LIGHT EMISSION; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; PHOTONS; QUENCHING; RAMAN SCATTERING; STACKING FAULTS; TITANIUM COMPOUNDS;

INFRARED PHOTOLUMINESCENCE; RECOMBINATION METHODS; THERMALLY STIMULATED CURRENTS (TSC);

SINGLE CRYSTALS;

EID: 4644231468     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200310256     Document Type: Article

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