Growth of bismuth oxide films by direct liquid injection-metal organic chemical vapor deposition with Bi(tmhd)3 (tmhd: 2,2,6,6-tetramethyl- 3,5-heptanedione)

Thin Solid Films

Volumn 468, Issue 1-2, 2004, Pages 79-83

  Kang, S W ^a   Rhee, S W ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Bismuth; CVD; Dielectrics; Metal oxide semiconductor structure

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE INTEGRATED CIRCUITS; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

DIRECT LIQUID INJECTION (DLI); GAS PHASE DISSOCIATION; LEAKAGE CURRENT; METAL-INSULATOR-SEMICONDUCTOR (MIS);

BISMUTH COMPOUNDS;

EID: 4644221870     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.04.021     Document Type: Article

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