Development of a commercially viable 4H-SiC PiN diode technology

BEC 2006 - 2006 International Baltic Electronics Conference; Proceedings of the 10th Biennial Baltic Electronics Conference

Volumn , Issue , 2006, Pages 19-22

  Das, Mrinal K ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRIC EQUIPMENT; OPTICAL DESIGN; SEMICONDUCTOR DIODES; SYSTEM STABILITY; TECHNOLOGY; VOLTAGE CONTROL; VOLTAGE STABILIZING CIRCUITS;

(E ,3E) PROCESS; (OTDR) TECHNOLOGY; 4H-SIC PIN; BASAL PLANES; CONVENTIONAL POWER; FAULT GROWTH; FORWARD VOLTAGE; FUNDAMENTAL PROBLEMS; HIGH-POWER DEVICES; INTERNATIONAL (CO); LONG TERM; SCREW DISLOCATIONS;

SILICON CARBIDE;

EID: 46249103496     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BEC.2006.311051     Document Type: Conference Paper

References (8)

1. M.K. Das, Latest Advances in 4H-SiC PiN and MOS Power Devices (International Semiconductor Device Research Symposium, Washington, DC, December 2003).
2. M.K. Das, et al., Proceedings of the 17th International Symposium on Power Semiconductor Devices and ICs, p. 299, 2005.
3. H. Lendenmann, et al., Mater. Sci. Forum, 389-393 (2002) p 1259-1264.
4. J.J. Sumakeris, et al., U.S. Patent 6,849,874 filed Oct. 26, 2001.
5. Y.I. Bogdanov, et al., Russian Microelectronics, 32 (2003) p 51.
6. S. Ha, et al., J. Cryst. Growth 244 (2002) 257.
7. f Drift in SiC Bipolar Power Devices (International Conference on Silicon Carbide and Related Materials, Pittsburgh, PA, September 2005).
8. B.A. Hull, et al., High Current 6 kV 4H-SiC PiNDiodes for Power Module Switching Applications (International Conference on Silicon Carbide and Related Materials, Pittsburgh, PA, September 2005).