Local microstructure and photoluminescence of Er-doped 12CaO·7Al2O3 powder

Journal of Rare Earths

Volumn 26, Issue 3, 2008, Pages 433-438

  WANG, Dan ^a,b   LIU, Yuxue ^a   XU, Changshan ^a   LIU, Yichun ^a   WANG, Guorui ^a   LI, Xinghua ^a  

^a NORTHEAST NORMAL UNIVERSITY   (China)

^b Jilin Teachers Institute of Engineering and Technology   (China)

Author keywords

absorption; C12A7:Er; photoluminescence; raman; rare earths; sol gel

Indexed keywords

ALUMINUM; LITHOGRAPHY;

ER-DOPED;

ERBIUM;

EID: 46149117967     PISSN: 10020721     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1002-0721(08)60112-X     Document Type: Article

References (23)

1. Steckl A., and Zavada J. Optoelectronic properties and applications of rare-earth-doped GaN. Mater. Res. Bull. 24 (1999) 33
2. Steckl A., Heikenfeld J., Garter M., Birkhahn R., and Lee D. Rare earth doped gallium nitride-light emission from ultraviolet to infrared. Compound Semicond. 6 (2000) 48
3. Komuro S., Katsumata T., Morikawa T., Zhao X., Isshiki H., and Aoyagi Y. Highly erbium-doped zinc-oxide thin film prepared by laser ablation and its 1.54 μm emission dynamics. J. Appl. Phys. 88 (2000) 7129
4. Filhol J., Jones R., Shaw M., and Briddon P. Structure and electrical activity of rare-earth dopants in GaN. Appl. Phys. Lett. 84 (2004) 2841
5. 2 films. J. Appl. Phys. 90 (2001) 5564
6. Favennec P., Haridon H., Salvi M., Moutonnet D., and Guillou Y.L. Luminescence of erbium implanted in various semiconductors. IV, III-V and II-VI materials. Electron. Lett. 25 (1989) 718
7. Hayashi K., Matsuishi S., Kamiya T., Hirano M., and Hosono H. Light-induced conversion of an insulating refractory oxide into a persistent electronic conductor. Nature 419 (2002) 462
8. 3. Phy. Rev. B. 73 (2006) 014101
9. 3 encasing abundant O-radicals. J. Am. Chem. Soc. 124 (2002) 738
10. -). Science 301 (2003) 626
11. Kim S., Miyakawa M., Hayashi K., Sakai T., Hirano M., and Hosono H. Simple and efficient fabrication of room temperature stable electride: Melt-solidification and glass ceramics. J. Am. Chem. Soc. 127 (2005) 1370
12. 3. J. Phys. Chem. B 109 (2005) 23836
13. 3. Mineral. Monatshefte 35 (1970) 547
14. 3. Chem. Mater. 16 (2004) 104
15. 3 electride from the melt and its application as an electron field emitter. Chem. Mater. 18 (2006) 1938
16. 3 ion-implanted optical waveguides. Opt. Mater. 28 (2006) 162
17. 3 ion-implanted optical waveguides. J. Appl. Phys. 94 (2003) 7128
18. 2 thin films induced by optically assisted reduction. Appl. Phys. Lett. 81 (2002) 4733
19. Wu H., Poitras C., Lipson M., Spencer M., Hunting J., and DiSalvo F. Green emission from Er-doped GaN powder. Appl. Phys. Lett. 86 (2005) 191918
20. 2 single crystals. Appl. Phys. Lett. 80 (2002) 4510
21. 3+. J. Chem. Phys. 63 (1975) 2074
22. Opera I., Hesse H., and Betzler K. Optical properties of bismuth borate glasses. Opt. Mater. 26 (2004) 235
23. O'hare J., and Donlan V. Crystal-field determination for trivalent erbium in yttrium orthoaluminate. Phys. Rev. B 15 (1977) 10