Tuning semiconducting properties of single carbon nanotube for fabrication of nano devices

Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

Volumn , Issue , 2006, Pages 1410-1413

  Chan, Ho Yin ^a,b   Xi, Ning ^a   Zhang, Jiangbo ^a   Li, Guangyong ^a  

^a Michigan State University   (United States)

^b MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; ATOMS; CARBON; ENERGY GAP; MICROSCOPIC EXAMINATION; MOLECULES; MULTIWALLED CARBON NANOTUBES (MWCN); NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; NEMS; OPTICAL DESIGN; PHOTONICS; SCANNING PROBE MICROSCOPY;

(MO Y) DOPING; (PL) PROPERTIES; ATOMIC FORCE (AF); ATOMIC FORCE MICROSCOPY (AFM); BAND GAPS; BAND-GAP MATERIALS; BARRIER HEIGHT (BH); BREAKDOWN (BD); CONDUCTION MECHANISMS; ELECTRICAL BREAKDOWN; ELECTRONIC ELEMENTS; INTERNATIONAL CONFERENCES; MOLECULAR SYSTEMS; MULTI WALLED CARBON NANOTUBE (MWCNT); NANO DEVICES; NANO MANIPULATION SYSTEMS; NANO TUBE; NANOTUBE WALLS; PHOTON ADSORPTION; SEMICONDUCTING PROPERTIES;

CARBON NANOTUBES;

EID: 46149104758     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NEMS.2006.334777     Document Type: Conference Paper

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