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Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 201-204

A 77 GHz transceiver for automotive radar system using a 120nm in 0.4AlAs/In0.35GaAs metamorphic HEMTs

(6) Kim, Kyoungwoon a Choi, Wooyeol a Kim, Sungwon a Seol, Gyungseon a Seo, Kwangseok a Kwon, Youngwoo a

a Seoul National University (South Korea)

Author keywords

77GHz; Automotive radar; MHEMT; MMIC; Transceiver

Indexed keywords

AMPLIFIERS (ELECTRONIC); DETECTORS; ELECTRIC CONDUCTIVITY; MICROWAVE CIRCUITS; MIXING; OPTICAL DESIGN; POWER AMPLIFIERS; RADAR; RADAR SYSTEMS; SEMICONDUCTOR MATERIALS; TRANSCEIVERS;

AUTOMOTIVE RADARS; COMPOUND SEMICONDUCTOR (CS); DOUBLER; GA TE LENGTHS; LOW NOISE; SINGLE CHIPS;

INTEGRATED CIRCUITS;

EID: 46149088700 PISSN: 15508781 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/CSICS.2006.319963 Document Type: Conference Paper

Times cited : (9)

References (7)

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2
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3
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4
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- Two-stage broadband high-gain W-band amplifier using 0.1 um metamorphic HEMT technology
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- Bok-Hyung Lee, An, D., Mun-Kyo Lee, Byeong-Ok Lim, Kim S D., Jin-Koo Rhee, "Two-stage broadband high-gain W-band amplifier using 0.1 um metamorphic HEMT technology." IEEE Electron Device Letters, vol.25, Issue 12, Dec. 2004 pp766 -768
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5
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6
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- Dong Min Kang, Ju Yeon Hong, Jae Yeob Shim, Jin Hee Lee, Hyung Sup Yoon, Kyung Ho Lee, "A 77GHz automotive radar MMIC chip set fabricated by a 0.15um MHEMT technology", Microwave Symposium Digest, 2005 IEEE MTT-S International 12-17 June 2005 pp2111-2114.
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7
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- 0.35GaAs MHEMTs With Ar Plasma Treatment, IEEE Electron Device Letters, 26, no. 11, pp787-789, Nov. 2005.
- 0.35GaAs MHEMTs With Ar Plasma Treatment," IEEE Electron Device Letters, vol.26, no. 11, pp787-789, Nov. 2005.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.