PSP-based compact FinFET model describing dc and RF measurements

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Smit, G D J ^a   Scholten, A J ^a   Serra, N ^a,b   Pijper, R M T ^a   Van Langevelde, R ^c   Mercha, A ^d   Gildenblat, G ^e   Klaassen, D B M ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b UNIVERSITY OF UDINE   (Italy)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d IMEC   (Belgium)

^e ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; LUMINOUS PAINT;

COMPACT MODELING; FINFETS; RF CIRCUIT SIMULATION; RF MEASUREMENTS;

POWDERS;

EID: 46049118238     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346990     Document Type: Conference Paper

References (9)

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2. See http://pspmodel.asu.edu/
3. G. Gildenblat et al., IEEE TED 53. pp. 1979-93 (2006).
4. See http://ray.eeel.nist.gov/modval/database/contents/reports/ micromosfet/standard.html
5. C.C. McAndrew. IEEE TED 53, pp. 2202-6 (2006).
6. H.C. Pao und C.T. Sah, Solid-State Electron. 9, pp. 927-37 (1966).
7. D. Ward and R. Dutton, IEEE J. Solid State Circuits 13, pp. 703-8 (1978).
8. B. Parvais et al. ICICDT06, Padova, Italy, May 24-26. pp. 76-9 (2006)
9. L.F. Tiemeijer et al., IEDM04, pp. 441-4 (2004).