Efficacy of fluorine doping at various stages on noise reduction

2005 IEEE Workshop on Microelectronics and Electron Devices, WMED

Volumn 2005, Issue , 2005, Pages 17-20

  Nelson, Mark M ^a   Yokoyama, Kosei ^a   Thomason, Michael ^a   Scott, Gregory ^a   Greenwood, Bruce ^a  

^a Technology Research and Development Group   (United States)

Author keywords

1 f noise; Fluorine; Noise reduction

Indexed keywords

FLUORINE DOPING; PROCESS FLOW;

DOPING (ADDITIVES); KNOWLEDGE ACQUISITION; NOISE ABATEMENT; PROCESS CONTROL;

FLUORINE;

EID: 33744484760     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WMED.2005.1431604     Document Type: Conference Paper

References (7)

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2. Wright, P.J. and Saraswat, K.C., "The Effect of Fluorine on Silicon Dioxide Gate Dielectrics", IEEE Transactions on Electron Devices, Vol. 36, No. 5, May 1989
3. Uesawa, K. et al., Japanese Patent Application 06-350079, "Manufacture of Semiconductor Device", Filed July 1993
4. Ishikawa, K, et al., Japanese Patent Application JP1995000114456, "Semiconductor Device and Manufacture Thereof (JP8316465A2), 1995.
5. Hsieh, J.C., et al., "Characteristics of MOS Capacitors of BF2 or B Implanted Polysilicon Gate with and without POC13 Co-doped", IEEE Electron Device Letters, Vol. 14, No. 5, May 1993.
6. Eriksson, T., et al., "Fluorine Redistribution in a Chemical Vapor Deposited Tungsten/Polycrystalline Silicon Gate Structure During Heat Treatment", J. Appl.Phys. 64 (6), September 15, 1988.
7. "Removal of the Process-induced Fluorine Associated to Chemical Vapor Deposition to Tungsten onto a Polycrystalline Silicon Gate Structure by Heat Treatment in a Hydrogen-containing Atmosphere", J. Appl. Phys. 68 (5), September 1, 1990