Noise modeling in lateral asymmetric MOSFET

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Roy, Ananda S ^a   Chauhan, Yogesh S ^a   Enz, Christian C ^a,b   Sallese, Jean Michel ^a  

^a EPFL   (Switzerland)

^b CSEM   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES;

GATE VOLTAGES; LATERAL ASYMMETRY; MOSFETS; NOISE MODELLING; NOISE PROPERTIES; ORDERS-OF-MAGNITUDE;

MOSFET DEVICES;

EID: 46049083803     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346994     Document Type: Conference Paper

References (7)

1. A. Aarts, R. van der Hout, J. Paasschens, A. Scholten, M. Willemsen, and D. Klaassen, "New fundamental insights into capacitance modeling of laterally nonuniform MOS devices," IEEE Trans. Electron Devices, vol. 53, no. 2, pp. 270- 278, Feb. 2006.
2. _, "Capacitance modeling of laterally non-uniform MOS devices," in IEEE International Electron Devices Meeting, Dec. 2004, pp. 751 - 754.
3. F. M. Klaassen and J. Prins, "Thermal Noise of MOS Transistors," Philips Res. Repts, vol. 22, pp. 505-514, Oct. 1967.
4. A. S. Roy, C. C. Enz, and J.-M. Sallese, "Noise Modeling Methodologies in the Presence of Mobility Degradation and Their Equivalence," IEEE Trans. Electron Devices, vol. 53, no. 2, pp. 348-355, Feb. 2006.
5. F. Bonani and G. Ghione, Noise in Semiconductor Devices : Modeling and Simulation. Springer, 2001.
6. A. S. Roy and C. Enz, "Compact Modeling of Thermal Noise in the MOS Transistor," IEEE Trans. Electron Devices, vol. 52, no. 4, pp. 611-614, Apr. 2005.
7. J. C. J. Paasschens, A. J. Scholten, and R. van Langevelde, "Generalisations of the Klaassen-Prins Equation for Calculating the Noise of Semiconductor Devices," IEEE Trans. Electron Devices, vol. 52, no. 11, pp. 2463- 2472, Nov. 2005.