Modeling electrical characteristics of thin-film field-effect transistors. III. Normally-on devices

Synthetic Metals

Volumn 158, Issue 11, 2008, Pages 473-478

  Stallinga, P ^a   Gomes, H L ^a  

^a UNIVERSITY OF ALGARVE   (Portugal)

Author keywords

Metal insulator metal transistor; Organic semiconductors; Thin film field effect transistors; Two dimensional electronics

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; ENERGY RESOURCES; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; METALS; PHOTOACOUSTIC EFFECT; PIGMENTS; SEMICONDUCTOR MATERIALS; THIN FILM DEVICES;

AMBIPOLAR; APPLIED (CO); BAND GAPS; DOPED SEMICONDUCTORS; ELECTRICAL CHARACTERISTICS; ELSEVIER (CO); FIELD EFFECT TRANSISTOR (FET); NARROW BANDS; TRANSFER CURVES; TRANSISTOR MODELING;

TRANSISTORS;

EID: 45849145770     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2008.03.011     Document Type: Article

References (5)

1. Stallinga P., and Gomes H.L. Synth. Met. 156 (2006) 1305
2. Stallinga P., and Gomes H.L. Synth. Met. 156 (2006) 1316
3. Stallinga P., and Gomes H.L. Org. Electr. 7 (2006) 592
4. Sze S.M. Physics of Semiconductor Devices. 2nd ed. (1981), Wiley & Sons, New York
5. Wikipedia, visited 1 March 2007.