Photovoltaic development for alpha voltaic batteries

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 106-109

  Bailey, Sheila G ^a   Wilt, David M ^a   Castro, Stephanie L ^b   Cress, Cory D ^c   Raffaelle, Ryne P ^c  

^a NASA GLENN RESEARCH CENTER   (United States)

^b OHIO AEROSPACE INSTITUTE   (United States)

^c ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA ENERGY; ALPHA VOLTAIC BATTERIES; CELL PERFORMANCE; NON-CONVENTIONAL CELL DESIGNS;

RADIATION DAMAGE; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM DOTS;

PHOTOVOLTAIC CELLS;

EID: 27944480816     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. W.G. Pfann and W. van Roosbroeck, Journal of Applied Physics, Volume 25, No. 11, 1954 pp. 1422-1434.
2. th IEEE Photovoltaic Specialists Conference, 1996, pp. 93-96.
3. rd World Conference on Photovoltaic Energy Conversion, 2003.
4. G.H. Dohler, IEEE J. Quantum Electron. QE22, 1986, p. 1683.
5. R.P. Raffaelle, et al., RIT Provisional Patents #60/557,993 and #60/587,364, 2004.
6. F. Guffarth, R. Heintz, M. Geller, C. Kapteyn, H. Born, R. Sellin, A. Hoffmann, D. Bimberg, N. A. Sobolev, and M. C. Carmo, "Radiation hardness of InGaAs/GaAs quantum dots", Appl. Phys. Lett. 82, 2003, p. 1941-1943.