Investigation of relation between Ga concentration and defect levels of Al/Cu(In,Ga)Se2 Schottky junctions using admittance spectroscopy

Thin Solid Films

Volumn 515, Issue 15 SPEC. ISS., 2007, Pages 6208-6211

  Sakurai, T ^a   Ishida, N ^a   Ishizuka, S ^b   Matsubara, K ^b   Sakurai, K ^b   Yamada, A ^b   Paul, G K ^a   Akimoto, K ^a   Niki, S ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Admittance spectroscopy; Bulk and surface defects; Cu(In,Ga)Se2; Defect state density

Indexed keywords

CONCENTRATION (PROCESS); SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS;

ADMITTANCE SPECTROSCOPY; DEFECT STATE DENSITY;

SURFACE DEFECTS;

EID: 34247366724     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.12.070     Document Type: Article

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