Low-temperature epitaxy of silicon by electron beam evaporation

Thin Solid Films

Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7643-7646

  Gorka, B ^a   Dogan, P ^a   Sieber, I ^a   Fenske, F ^a   Gall, S ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Crystalline silicon; Extended defects; Low temperature epitaxy; Reflectance; Secco etching

Indexed keywords

ELECTRON BEAMS; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; POLYCRYSTALLINE MATERIALS; SILICON WAFERS; SUBSTRATES;

CRYSTALLINE SILICON; EXTENDED DEFECTS; LOW TEMPERATURE EPITAXY; SECCO ETCHING;

THIN FILMS;

EID: 34547603388     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.161     Document Type: Article

References (9)

1. Kazmerski L.L. J. Electr. Spectr. 150 (2006) 105
2. Rau B., Sieber I., Schneider J., Muske M., Stöger-Pollach M., Schattschneider P., Gall S., and Fuhs W. J. Cryst. Growth 270 (2004) 396
3. Gall S., Schneider J., Klein J., Hübener K., Muske M., Rau B., Conrad E., Sieber I., Petter K., Lips K., Stöger-Pollach M., Schattschneider P., and Fuhs W. Thin Solid Films 511/512 (2006) 7
4. Secco d'Argona F. J. Electrochem. Soc. 119 (1972) 948
5. Zanzucchi P.J., and Duffy M.D. Appl. Opt. 17 (1978) 3477
6. Yu P.J., and Cardona M. Fundamentals of Semiconductors (1996), Springer Verlag, Berlin Heidelberg
7. Robertson Jr. G.D., Baron R., Vasudev P.K., and Marsh O.J. J. Cryst. Growth 68 (1984) 691
8. Mendelson S. J. Appl. Phys. 35 (1964) 1570
9. Straub A., Widenborg P.I., Sprour A., Huang Y., Harder N.P., and Aberle A.G. J. Cryst. Growth 265 (2004) 168