Synthesis and control of ultra thin gate oxides for the 90 and 65 NM nodes

13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005

Volumn , Issue , 2005, Pages 31-35

  Shepard Jr , Joseph F ^a   Chou, Anthony ^a   Chudzik, Michael ^b   Collins, Christopher ^a   Freiler, Michael ^a   He, Wei ^a   Kirsch, Paul ^c   Loebl, Andrew ^a   Mo, Renee ^a   Ronsheim, Paul ^a   Rottenkolber, Erica ^a   Zhu, Wenjuan ^a  

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

65NM TECHNOLOGIES; ATOMIC DIMENSIONS; COMMON PLATFORMS; COMPOSITE PROCESSES; COMPOSITIONAL ANALYSIS; FILM CHARACTERIZATIONS; GATE OXIDE PROCESSES; IN LINES; MEASUREMENT TECHNIQUES; OPTICAL-; OXYGEN DOSES; PROCESS CHAMBERS; RELATIVE SENSITIVITIES; SEMICONDUCTOR MANUFACTURING; SINGLE WAFERS; ULTRA THIN GATES;

CRYSTALS; ELECTRIC CONDUCTIVITY; FILMS; GATES (TRANSISTOR); INTERNET PROTOCOLS; MOS DEVICES; NANOTECHNOLOGY; NITRIDES; OXYGEN; RAPID THERMAL ANNEALING; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SPECIFICATIONS;

PROCESS CONTROL;

EID: 45749109713     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2005.1613681     Document Type: Conference Paper

References (5)

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