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Volumn 573-574, Issue , 2008, Pages 35-43

Fast diffusion in Germanium and silicon investigated by lamp-based rapid thermal annealing

Author keywords

Dissociative mechanism; Kick out mechanism; Self interstitials; Spreading resistance profiling; Tracer diffusion; Vacancies

Indexed keywords

DIFFUSION; ISOTHERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING GERMANIUM; TEMPERATURE MEASUREMENT; VACANCIES;

EID: 45749086536     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.573-574.35     Document Type: Article
Times cited : (6)

References (21)
  • 3
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    • (1975) Diffusion in Solids
    • Warburton, W.K.1    Turnbull, D.2
  • 5
    • 45749130107 scopus 로고    scopus 로고
    • May
    • Opto & Laser Europe, Vol 5 (May) (2001), p. 32
    • (2001) Opto & Laser Europe , vol.5 , pp. 32
  • 6
    • 45749148631 scopus 로고    scopus 로고
    • October
    • Compound Semiconductor, Vol 10 (October) (2001), p. 57
    • (2001) Compound Semiconductor , vol.10 , pp. 57
  • 8
    • 0011374278 scopus 로고
    • ed. by G.E. Murch and A.S. Nowick Academic Press, New York
    • S.J. Rothman, in: Diffusion in Crystalline Solids, ed. by G.E. Murch and A.S. Nowick (Academic Press, New York 1984), p. 1
    • (1984) Diffusion in Crystalline Solids , pp. 1
    • Rothman, S.J.1
  • 21
    • 45749112466 scopus 로고
    • Doctoral Thesis, Westfälische Wilhelms-University of Münster
    • W. Lerch, Doctoral Thesis, Westfälische Wilhelms-University of Münster (1994)
    • (1994)
    • Lerch, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.