Damage analysis of EUV mask under Ga focused ion beam irradiation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Nishiyama, Yasushi ^a   Amano, Tsuyoshi ^a   Shigemura, Hiroyuki ^a   Terasawa, Tsuneo ^a   Suga, Osamu ^a   Kozakai, Tomokazu ^b   Kikuchi, Syuichi ^b   Shiina, Kensuke ^b   Yasaka, Anto ^b   Hagiwara, Ryoji ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b SII NANOTECHNOLOGY INC   (Japan)

Author keywords

Damage; Defects; EUV; FIB; Mask; Repair

Indexed keywords

ABSORPTION; BEAM PLASMA INTERACTIONS; CHARGED PARTICLES; COMPUTER NETWORKS; ELECTRONS; EXTREME ULTRAVIOLET LITHOGRAPHY; FOCUSED ION BEAMS; ION BEAMS; ION BOMBARDMENT; IRRADIATION; LITHOGRAPHY; MICROFLUIDICS; MULTILAYERS; PHOTOMASKS; RADIATION; REFLECTION; TECHNOLOGY; ULTRAVIOLET DEVICES;

(1 1 0) SURFACE; AERIAL IMAGING; CAPPING LAYER (GC LAYER); CONCENTRATION (COMPOSITION); DAMAGE ANALYSIS; DEFECT REPAIR; EUV MASKS; EUV REFLECTIVITY; FOCUSED ION BEAM IRRADIATION; IMPLANTED REGION; LINE PATTERNING; MASK TECHNOLOGY; MULTILAYER (ML); NEXT-GENERATION LITHOGRAPHY (NGL); PHOTO MASKING;

GALLIUM;

EID: 45549109306     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793026     Document Type: Conference Paper

References (9)

1. Liang, T., Stivers, A., Livengood, R., Yan, P.-Y., Zhang, G., Lo, F.-C, "Progress in extreme ultraviolet mask repair using a focused ion beam," J. Vac. Sci. Technol. B, 18, 3216-3220 (2000).
2. Liang, T., Stivers, A., Penn, M., Bald, D., Sethi, C., Boegli, V., Budach, M., Edinger, K., Spies, P., "Demonstration of Damage-Free Mask Repair Using Electron Beam-Induced Processes," Proc. SPIE, 5446, 291-300 (2004).
3. Brinkley, D., White, R., Bozak, R., Liang, T., Liu, G., "Use of Nanomachining for Subtractive Repair of EUV and Other Challenging Mask Defects," Proc. SPIE, 4754, 900-911 (2002).
4. Abe, T., Fujii, A., Mohri, H., Hayashi, N., Tanaka, Y., Nishiyama, I., Suga, O., Hagiwara, R., Yasaka, A., "Defect repair of EUV absorber layer using low acceleration voltage FIB-GAE," International EUVL Symposium 2006.
5. Kanayama, K., Tamura, S., Nishiyama, Y., Kawashita, M., Matsuo, T., Tamura, A., Nagashige, S., Hiruma, K., Goo, D., Nishiyama, I., "Evaluation of Bi-layer TaSix Absorber on Buffer for EUV Mask," Proc. SPIE, 6349, 63493A (2006).
6. http://www.srim.org/
7. Henke, B. L., Gullikson, E. M., Davis, J. C., "X-ray interactions: photoabsorption, scattering, transmission, and reflection at E=50-30000 eV, Z=1-92," Atomic Data and Nuclear Tata Tables, 54, 181-342 (1993).
8. http://henke.lbl.gov/optical_constants/
9. Aoyama, H., Amano, T., Nishiyama, Y., Shigemura, H., Suga, O., "Repair specification study for half pitch 32-nm patterns for EUVL," Proc. SPIE, 6730, 68305L (2007).