The ultimate chrome absorber in photomask-making

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Hashimoto, Masahiro ^a   Iwashita, Hiroyuki ^a   Kominato, Atsushi ^a   Shishido, Hiroaki ^a   Ushida, Masao ^a   Mitsui, Hideaki ^a  

^a HOYA CORPORATION   (Japan)

Author keywords

32nm node; 93nm lithography; Blanks; CAR; CD linearity; Cr absorber; Dry etching; Phase shift; Resolution; TFC

Indexed keywords

ARCHITECTURAL DESIGN; CADMIUM; CADMIUM COMPOUNDS; CHROMIUM; CHROMIUM PLATING; COMPUTER NETWORKS; ELECTRON BEAM LITHOGRAPHY; ETCHING; TECHNOLOGY;

(E ,3E) PROCESS; (OTDR) TECHNOLOGY; 32 NM TECHNOLOGY; DEVICE FABRICATIONS; DRY ETCHING; ETCHING TIME; HARD MASKS; IMMERSION LITHOGRAPHY (IML); MASK TECHNOLOGY; NEXT-GENERATION LITHOGRAPHY (NGL); OVER-ETCHING; PHOTO MASKING; RESIST THICKNESSES;

DRY ETCHING;

EID: 45549107312     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793013     Document Type: Conference Paper

References (2)

1. Hashimoto, M., Yamada, T., Sakamoto, M., Hara, M., Ohkubo, Y., and Ushida, M., "Development of new chrome blanks for 65nm-node and beyond", Proc. SPIE 5567, 975 (2004)
2. Abe, Y., Morimoto, J., Yokoyama, T., Kominato, A,. and Ohkubo, Y., "Multi-layer resist system for 45nm node and beyond(III)", Proc. SPIE 6349 (II), 35 (2006).