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Volumn 7028, Issue , 2008, Pages

Electrical metrics for lithographic line-end tapering

Author keywords

[No Author keywords available]

Indexed keywords

GATE EDGE; LAYOUT AREA; LINE ENDS; LOW K1 LITHOGRAPHY; MASK TECHNOLOGY; METRICS (CO); NEXT-GENERATION LITHOGRAPHY (NGL); PHOTO MASKING;

EID: 45549091504     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793117     Document Type: Conference Paper
Times cited : (11)

References (15)
  • 1
    • 45549110300 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors, http://public.itrs.net/.
  • 2
    • 45549110299 scopus 로고    scopus 로고
    • DaVinci User's Guide, Version 2006.06.SP1.
    • DaVinci User's Guide, Version 2006.06.SP1.
  • 3
    • 45549105153 scopus 로고    scopus 로고
    • MATLAB, Version 7.2.0.294 R2006a
    • MATLAB, Version 7.2.0.294 (R2006a), http://www.mathworks.com.
  • 10
    • 2642552225 scopus 로고    scopus 로고
    • TCAD-Based Statistical Analysis and Modeling of Gate Line-Edge Roughness Effect on Nanoscale MOS Transistor Performance Scaling
    • S. D. Kim, H. Wada and J. C. S. Woo, "TCAD-Based Statistical Analysis and Modeling of Gate Line-Edge Roughness Effect on Nanoscale MOS Transistor Performance Scaling", IEEE Transactions on Semiconductor Manufacturing, Vol. 17(2) (2004), pp. 192-200.
    • (2004) IEEE Transactions on Semiconductor Manufacturing , vol.17 , Issue.2 , pp. 192-200
    • Kim, S.D.1    Wada, H.2    Woo, J.C.S.3
  • 12
    • 32044437336 scopus 로고    scopus 로고
    • Modeling Silicon on Insulator MOS Transistors with Nonrectangular-Gate layouts
    • R. Giacomini and J. A. Martino, "Modeling Silicon on Insulator MOS Transistors with Nonrectangular-Gate layouts", Journal of the Electrochemical Society, 2006, pp. G218-G222.
    • (2006) Journal of the Electrochemical Society
    • Giacomini, R.1    Martino, J.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.