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Volumn , Issue , 2008, Pages 480-485

Investigation of diffusion rounding for post-lithography analysis

Author keywords

[No Author keywords available]

Indexed keywords

AGGRESSIVE SCALING; CIRCUIT PERFORMANCES; DESIGN AUTOMATION CONFERENCE; FEATURE SIZES; POLY GATES; POWER RAILS; SOUTH PACIFIC; SUB-WAVELENGTH LITHOGRAPHY; T-SHAPED; WEIGHTING FUNCTIONS;

EID: 45549107216     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASPDAC.2008.4483998     Document Type: Conference Paper
Times cited : (13)

References (17)
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  • 4
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    • TCAD-Based Statistical Analysis and Modeling of Gate Line-Edge Roughness Effect on Nanoscale MOS Transistor Performance and Scaling
    • May
    • S. D. Kim, H. Wada, and Jason C. S. Woo, "TCAD-Based Statistical Analysis and Modeling of Gate Line-Edge Roughness Effect on Nanoscale MOS Transistor Performance and Scaling", IEEE Transactions on Semiconductor Manufacturing, vol. 17, no. 2, pp. 192-200, May 2004.
    • (2004) IEEE Transactions on Semiconductor Manufacturing , vol.17 , Issue.2 , pp. 192-200
    • Kim, S.D.1    Wada, H.2    Woo, J.C.S.3
  • 6
    • 32044437336 scopus 로고    scopus 로고
    • Modeling Silicon on Insulator MOS Transistors with Nonrectangular-Gate layouts
    • R. Giacomini and J. A. Martino, "Modeling Silicon on Insulator MOS Transistors with Nonrectangular-Gate layouts", Journal of the Electrochemical Society, pp.G218-G222, 2006.
    • (2006) Journal of the Electrochemical Society
    • Giacomini, R.1    Martino, J.A.2
  • 7
    • 33745608353 scopus 로고    scopus 로고
    • From Poly Line to Transistor: Building BSIM Models for Non-Rectangular Transistors
    • W. J. Poppe, L. Capodieci, J. Wu, and A. Neureuther, "From Poly Line to Transistor: Building BSIM Models for Non-Rectangular Transistors", Proc. of SPIE, vol. 6156, no. 54, 2006.
    • (2006) Proc. of SPIE , vol.6156 , Issue.54
    • Poppe, W.J.1    Capodieci, L.2    Wu, J.3    Neureuther, A.4
  • 8
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    • 65nm OPC and Design Optimization by Using Simple Electrical Transistor Simulation
    • Y. Trouiller et al., "65nm OPC and Design Optimization by Using Simple Electrical Transistor Simulation", Proc. of SPIE, vol. 5756, 2005.
    • (2005) Proc. of SPIE , vol.5756
    • Trouiller, Y.1
  • 9
    • 33748065992 scopus 로고    scopus 로고
    • Optimization of Layout Design and OPC by Using Estimation of Transistor Properties
    • K. Koike, K. Nakayama, K. Ogawa, and H. Ohnuma, "Optimization of Layout Design and OPC by Using Estimation of Transistor Properties", Proc. of SPIE, vol. 6283, 2006.
    • (2006) Proc. of SPIE , vol.6283
    • Koike, K.1    Nakayama, K.2    Ogawa, K.3    Ohnuma, H.4
  • 13
    • 0023983720 scopus 로고
    • Inverse-Narrow-Width Effects and Small-Geometry MOSFET Threshold Voltage Model
    • March
    • K.K-L. Hsueh, J. J. Sanchez, T. A. Demassa, and L. A. Akers, "Inverse-Narrow-Width Effects and Small-Geometry MOSFET Threshold Voltage Model", IEEE Transactions on Electron Devices, vol. 35, no. 3, pp. 325-338, March 1988.
    • (1988) IEEE Transactions on Electron Devices , vol.35 , Issue.3 , pp. 325-338
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  • 17
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    • Feb
    • P. Gupta, A. B. Kahng, Y. Kim, S. Shah, and D. Sylvester, "Modeling of Non-Uniform Device Geometries for Post-Lithography Circuit Analysis", Proc. of SPIE, vol. 6156, pp. 237-246, Feb. 2006.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.