Photomask technology for 32nm node and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Hikichi, Ryugo ^a   Ishii, Hiroyuki ^a   Migita, Hidekazu ^a   Kakehi, Noriko ^a   Shimizu, Mochihiro ^a   Takamizawa, Hideyoshi ^a   Nagano, Tsugumi ^a   Hashimoto, Masahiro ^b   Iwashita, Hiroyuki ^b   Suzuki, Toshiyuki ^b   Hosoya, Morio ^b   Ohkubo, Yasushi ^b   Ushida, Masao ^b   Mitsui, Hideaki ^b  

^a DAI NIPPON PRINTING CO LTD   (Japan)

^b HOYA CORPORATION   (Japan)

Author keywords

193nm lithography; 32nm node; Binary; Blanks; CD linearity; COG; COMS; Dry etching; Phase shift; Resolution

Indexed keywords

CADMIUM; CADMIUM COMPOUNDS; CHROMIUM; COMPUTER NETWORKS; CRACK DETECTION; DATA STORAGE EQUIPMENT; ELECTROMAGNETIC WAVE ABSORPTION; ELECTRON BEAM LITHOGRAPHY; ENERGY ABSORPTION; ETCHING; MULTITASKING; NANOTECHNOLOGY; TECHNOLOGY;

(OTDR) TECHNOLOGY; 32 NM TECHNOLOGY; BINARY MASKS; CRITICAL DIMENSION (CD) LINEARITY; DEVICE FABRICATIONS; ETCHING TIME; HARD MASKS; HIGH PRECISION; HOLE PATTERNS; IMMERSION LITHOGRAPHY (IML); MAKING PROCESS; MASK TECHNOLOGY; MULTI-LAYERED; NEXT-GENERATION LITHOGRAPHY (NGL); PHASE-SHIFT MASKS (PSM); PHOTO MASKING; PHOTOMASK BLANKS; RESIST THICKNESSES; SUB-100 NM; SUPERIOR PERFORMANCE; SUPERIOR RESOLUTION; THICK RESIST;

PHOTOMASKS;

EID: 45549084447     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793014     Document Type: Conference Paper

References (2)

1. Abe, Y., Morimoto, J., Yokoyama, T., Kominato, A, and Ohkubo, Y., "Multi-layer resist system for 45nm node and beyond(III)", Proc. SPIE 6349 (II), 35 (2006).
2. Kojima, Y., Shirasaki, M., Chiba, K., Tanaka, T., Inazuki, Y., Yoshikawa, H., Okazaki, S., Iwase, K., Ishikawa, K., and Ozawa, K., "Alternating Phase-Shift Mask and Binary Mask for 45-nm Node and Beyond", Proc. SPIE 6607(1), 0C (2007).