45nm and 32nm half-pitch patterning with 193nm dry lithography and double patterning

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6924, Issue , 2008, Pages

  Dai, Huixiong ^a   Bencher, Chris ^a   Chen, Yongmei ^a   Woo, Hyungje ^a   Ngai, Chris ^a   Xu, Xumou ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

193nm dry lithography; Advanced patterning film (APF); Double patterning (DP); Hard mask (HM); Line edge roughness (LER); Line width roughness (LWR)

Indexed keywords

ACTIVE FILTERS; COMPUTER NETWORKS; CURING; DRYING; ELECTRON BEAM LITHOGRAPHY; FILMS; LIGHT WATER REACTORS; PHOTORESISTS; PIGMENTS; ROUGHNESS MEASUREMENT; SODIUM; TECHNOLOGY;

(E ,3E) PROCESS; 32 NM TECHNOLOGY; APPLIED MATERIALS (CO); BRIGHT-FIELD (BF); CRITICAL DIMENSION UNIFORMITY (CDU); DARK FIELDS; DOUBLE PATTERNING; DRY LITHOGRAPHY; HARD MASKS; IN LINE; INTERNATIONAL TECHNOLOGY; LINE WIDTH ROUGHNESS (LWR); LINE WIDTHS; OPTICAL MICRO LITHOGRAPHY; PITCH PATTERNING;

CURVE FITTING;

EID: 45449095902     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772260     Document Type: Conference Paper

References (5)

1. International Technology Roadmap for Semiconductors (ITRS 2007), http://public.itrs.net
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3. Mircea Duasa, et al, "Pitch doubling through dual patterning lithography challenges in integration and Litho budgets", Proc. Of SPIE, Vol. 6520, 2007
4. Eelco va setten, et al, "Pushing the boundary: low-k1 extension by polarized illumination", Proc. of SPIE, Vol. 6520, 2007.
5. Henry Megens, et al, "Advances in process Overlay - Alignment Solutions for Future Technology Nodes", Proc. of SPIE, Vol. 6518, 2007.