Evaluating the accuracy of a calibrated rigorous physical resist model under various process and illumination conditions

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6924, Issue , 2008, Pages

  Robertson, Stewart A ^a   Kim, Byung Sung ^b   Choi, Woon Hyuk ^b   Kim, Yoo Hyon ^b   Biafore, John J ^a   Smith, Mark D ^a  

^a KLA Tencor Austin   (United States)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Lithography simulation; PROLITH; Rigorous physical photoresist model

Indexed keywords

BEHAVIORAL RESEARCH; CADMIUM; CADMIUM COMPOUNDS; CALIBRATION; CLADDING (COATING); CRACK DETECTION; ELECTRON BEAM LITHOGRAPHY; FORECASTING; MAGNETIC STORAGE; PHOTORESISTS; PIGMENTS; REFLECTION; TECHNOLOGY;

(E ,3E) PROCESS; ANTI-REFLECTION COATING (ARC); CALIBRATION DATA; DATA SETS; DATA-SETS; DOUBLE LAYER (ELECTRIC); EXPERIMENTAL VALIDATIONS; ILLUMINATION CONDITIONS; NUMERICAL APERTURE (NA); OPTICAL MICRO LITHOGRAPHY; PARAMETER SPACES; PROCESS CONDITIONS; PROLITH; QUANTITATIVE ACCURACY; RESIST THICKNESSES; RMS ERRORS; SUB WAVELENGTH; SUBSTRATE MATERIALS; TOP-DOWN;

MATHEMATICAL MODELS;

EID: 45449095381     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772766     Document Type: Conference Paper

References (10)

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