Physically-based compact models for fast lithography simulation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5754, Issue PART 1, 2005, Pages 537-542

  Lafferty, Neal ^a   Adam, Kostas ^b   Granik, Yuri ^b   Torres, Andres ^b   Maurer, Wilhelm ^c  

^a IMEC   (Belgium)

^b MENTOR GRAPHICS CORPORATION   (United States)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

ArF Lithography; Lithography Simulation; OPC; RET; TCCcalc; VT5

Indexed keywords

COMPUTER HARDWARE; COMPUTER SIMULATION; IMAGE ENHANCEMENT; MATHEMATICAL MODELS; OPTICAL SYSTEMS;

ARF LITHOGRAPHY; LITHOGRAPHY SIMULATION; OPC; RET; TCCCALC; VT5;

PHOTOLITHOGRAPHY;

EID: 25144484771     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.599889     Document Type: Conference Paper

References (4)

1. J. Schacht, et al. "Calibration of OPC models for multiple focus conditions" Proceedings of SPIE vol. 5377, Optical Microlithography XVII, May 2004.
2. B. W. Smith, J. R. Sheats, "Microlithography: Science and Technology", New York: Marcel Decker, Inc., 1998.
3. T. Heil, et al. "Predictive modeling of advanced illumination pupils used as imaging enhancement for low k1 lithography", Proceedings of SPIE vol. 5377, Microlithography XVII, May 2004.
4. Y. Granik, "Dry Etch Proximity Modeling in Mask Fabrication", Proceedings of SPIE vol. 5130, Photomask and Next Generation Mask Technology Vol. X, August 2003.