Precise CD control techniques for double patterning and sidewall transfer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6924, Issue , 2008, Pages

  Nishimura, Eiichi ^a   Kushibiki, Masato ^a   Yatsuda, Koichi ^a  

^a TOKYO ELECTRON LTD   (Japan)

Author keywords

CD control; Chemical dry etch; Double patterning; Mask bending; Multilayer resist; Reactive ion etch; Sidewall transfer; Trimming

Indexed keywords

ASPECT RATIO; BENDING (DEFORMATION); CADMIUM; CADMIUM COMPOUNDS; CHEMICAL EQUIPMENT; COMPUTER NETWORKS; CONTROL EQUIPMENT; CRACK DETECTION; CURING; DATA STORAGE EQUIPMENT; DIMENSIONAL STABILITY; DRY ETCHING; DRYING; ELECTRON BEAM LITHOGRAPHY; NONMETALS; OXIDE FILMS; PHOTORESISTS; PIGMENTS; REACTIVE ION ETCHING; SILICON; SILICON COMPOUNDS; SPUTTERING; SURFACE REACTIONS; TECHNOLOGY; TECHNOLOGY TRANSFER; TRIMMING;

(1 1 0) SURFACE; (E ,3E) PROCESS; (OTDR) TECHNOLOGY; CHEMICAL DRY ETCH (CDE); CRITICAL DIMENSION (CD); CROSS DIRECTIONAL (CD) CONTROL; DOUBLE PATTERNING; GAS FLOWING; HARD MASKS; HIGH TEMPERATURE (HT); LOW TEMPERATURE (LTR); OPTICAL MICRO LITHOGRAPHY; ORGANIC MATERIALS (OM); PROCESS FLOWS; REACTION PRODUCTS; REACTIVE GASES; REACTIVE ION ETCHING (REI); SILICON OXIDE FILMS;

PROCESS CONTROL;

EID: 45449094587     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772630     Document Type: Conference Paper

References (5)

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