Growth of c-GaN films on GaAs(100) using hot-wire CVD

Thin Solid Films

Volumn 430, Issue 1-2, 2003, Pages 178-181

  Yasui, Kanji ^a   Kanauchi, Kai ^a   Akahane, Tadashi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Cubic GaN; GaAs wafer; Hot wire chemical vapor deposition (HW CVD)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON WAFERS; SUBSTRATES;

NITRIDATION;

SEMICONDUCTING FILMS;

EID: 0038485868     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00105-6     Document Type: Conference Paper

References (5)

1. Okumura H., Misawa S., Yoshida S. Appl. Phys. Lett. 59:1991;1058.
2. Okumura H., Misawa S., Okahisa T., Yoshida S. J. Cryst. Growth. 136:1994;361.
3. Okumura H., Ohta K., Feuillet G., Balakrishman K., Chichibu S., Hamaguchi H., Hacke P., Yoshida S. J. Cryst. Growth. 178:1997;113.
4. Yasui K., Morimoto K., Akahane T. Extended Abstracts of the 2nd International Conference on Cat-CVD, Denver, USA, 10-13 September. 2002;. p. 247.
5. Yamawaki M., Ohara K., Morita D., Morimoto T., Umemoto H., Masuda A., Matsumura H. Ext. Abst. Jpn. Soc. Appl. Phys. 2:2002;924 in Japanese.