Synthesis of conical Si array on Si(100) for a field electron emitter by plasma-enhanced chemical vapor deposition

Thin Solid Films

Volumn 464-465, Issue , 2004, Pages 194-198

  Lee, Kuei Yi ^a   Honda, Shin Ichi ^a   Katayama, Mitsuhiro ^a   Kuzuoka, Takashi ^a   Baek, Yang Gyu ^a   Ohkura, Shigeharu ^a   Aoki, Katsunori ^b   Hirao, Takashi ^a,c   Oura, Kenjiro ^a  

^a OSAKA UNIVERSITY   (Japan)

^b Rodel Nitta Company   (Japan)

^c KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Conical Si array; Field electron emission; Number density control; Plasma enhanced chemical vapor deposition

Indexed keywords

ANNEALING; COMPOSITION; CURRENT DENSITY; DIFFUSION; ELECTRIC FIELDS; ELECTRONS; ENERGY DISPERSIVE SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SYNTHESIS (CHEMICAL); THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

CONICAL SI ARRAY; FIELD ELECTRON EMISSION; FILM THICKNESS; NUMBER DENSITY CONTROL;

SILICON;

EID: 4544350548     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.018     Document Type: Article

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