Partial discharge failure analysis of AlN substrates for IGBT modules

Microelectronics Reliability

Volumn 44, Issue 9-11 SPEC. ISS., 2004, Pages 1425-1430

  Fabian, J H ^a   Hartmann, S ^a   Hamidi, A ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CERAMIC MATERIALS; FAILURE ANALYSIS; HEAT SINKS; MICROPROCESSOR CHIPS; PARTIAL DISCHARGES; SILICON; VIDEO CAMERAS;

ELECTRICAL INSULATIONS; PARTIAL DISCHARGE RESISTANCE; PHASE RESOLVED PARTIAL DISCHARGE (PRPD); SILICONE GELS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 4544307772     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.07.111     Document Type: Conference Paper

References (6)

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3. Petrarca C, Cascone B, Fratelli L, Vitelli M. Partial Discharge diagnostics on 3.3kV, 1.2kA IGBT modules. High Voltage Engineering Symposium, London, UK, 22-27 August 1999. p. 4.324.P2-4.327.P2.
4. Mitic G, Lefranc G. Localization of electrical-insulation- and Partial-Discharge failures of IGBT modules. IEEE Transactions on Industry Applications 2002; 38 (1): 175-178.
5. Berth M. Partial Discharge behaviour of power electronic packaging insulation. Proceedings of 1998 IEEE International Symposium on Electrical Insulating Materials, Toyohasi, Japan, 27-30 Sept. 1998. p. 565-568.
6. König D, Rao YN. Partial Dischargs in electrical power apparatus. VDE-Verlag, Berlin, 1993.